SURFACE TREATMENT CHEMICAL FOR ELECTRONICS INDUSTRY
Electronic devices are increasingly evolving towards more compactness with higher performance. our chemistry responds effectively to the need to process printed boards or semiconductor circuits in more detail, more compactly with higher density to meet this evolutionary trend.
Tel: 84-24-3875-9806/7/8
Email: sales.jcuvietnam@jcu-i.com
CHEMICAL FOR PRINTED CIRCUIT BOARDS
PROCESS | APPLICATION & FEATURES | PROCESS NAME | |
Pretreatment for circuit formation | Roughen the copper surface as a pretreatment for circuit formation. Hydrogen peroxide/sulfuric acid-based etching agent. Adhesion between copper and resist is increased, and the defect rate is reduced. |
NBSⅢ-210W3C | |
Pretreatment for lamination | Surface treatment agent for direct CO2 laser processing. Hydrogen peroxide/sulfuric acid-based etching agent. Improves CO2 laser energy absorption and enables direct via formation on the copper surface. Compared to the blackening process, the process is less complicated, and since it is a horizontal transfer, production efficiency is improved. |
NBDL | |
Half etching | Hydrogen peroxide/sulfuric acid-based etching agent capable of uniformly treating copper foils. It has a high etching speed and is suitable for thin copper foil, which is effective for fine circuit formation (subtractive and semi-additive methods). |
HE-500W3C-EX | |
Hydrogen peroxide/sulfuric acid (H2O2/H2SO4) etching agent to improve copper foil uniformity. Suppresses pits formation after etching and ensures thin copper film. |
HE3-530W3C | ||
Surface treatment agent for direct CO₂ laser processing |
Surface treatment agent for direct CO₂ laser processing. Hydrogen peroxide/sulfuric acid-based etching agent. |
NBDL | |
DFR Residue treatment | The WD-150 process is a resist residue stripping process for PCB after the development of DFR. With the application of this process after development, the undercut after flash etching can be suppressed. |
WD-150 | |
Cleaning prior to Electro copper plating |
Best suited as the cleaner prior to secondary copper plating. | PB-242D | |
Sulfuric acid-based acid cleaner that removes oxide film and resist remnants. Excellent osmotic force makes it best suited for PWBs with small through and via holes. |
PB-268 | ||
Sulfuric acid-based acid cleaner that removes oxide film and resist remnants. Suitable for shower cleaning due to low foaming. Further reduces DFR attackability. |
PB-280 | ||
Organic acid-based acid cleaner. Suitable for shower and spray cleaning due to extremely low foaming. |
PB-242D PUS | ||
No foaming type based on PB-242D.Suited for vertical, continuous plating machine. | PB-242D PU | ||
Electro acid copper plating for via filling | Acid copper plating for build-up PWBs capable of via-filling. Intended for panel plating. Suited for the any layer stuck construction thanks to its filling capability with a thin layer on the top surface. |
CU-BRITE VL (CS) | |
Copper sulfate plating process for via hole filling and through hole filling. Enables both low-aspect through hole filling and BVH filling. |
CU-BRITE VLX | ||
Electro acid copper plating through hole filling | Excellent through hole filling with thin surface film. Suitalbe for both soluble and insoluble anodes. | CU-BRITE TF4 | |
Copper sulfate plating process for via hole filling and through hole filling. Enables both low-aspect through hole filling and BVH filling. |
CU-BRITE VLX | ||
Electro acid copper plating | The most orthodox process having all the basic performance required by acid copper plating for through holes filling. Excellent throwing power and facile bath management. |
JC-BRITE 211 | |
Improved leveling performance besides the same features as those of JC-BRITE 211. Suited for insoluble anode. |
JC-BRITE 301 | ||
Especially excellent throwing power for BVHs besides through holes. | CU-BRITE VT28 | ||
Rack stripping | Copper stripper from stainless steel racks. Has a great stripping rate. Has specially excellent bath and hydrogen peroxide stability. |
ST-479 | |
Resist stripper | A concentrated aqueous solution consisting mainly of inorganic alkali components. Ideal for stripping DFR for fine pattern formation. Contains no nitrogen, phosphorus, or toxins. |
RS-091 | |
SAP Circuit formation | Hydrogen peroxide/sulfuric acid-based etching agent for circuit formation in the Semi Additive Process. Reduction in the width and thickness of circuits is extremely suppressed for it preferentially dissolves and removes the electrolessly plated copper. |
SAC | |
MSAP Circuit formation | Hydrogen peroxide/sulfuric acid-based etching agent for circuit formation in the Modified Semi Additive Process for electroplated copper foil base. Preferentially dissolves and removes the seed layer (copper substrate) of electroplated copper base. |
FE-830ⅡW3C | |
Pretreatment for SR | Hydrogen peroxide/sulfuric acid (H2O2/H2SO4) -based etching agent for roughening the copper surface in the steps prior to circuit formation and SR application. | NBSⅢ-210W3C |